Guide to compliance with powerful bipolar transistors Philips and other manufacturers of transistors.
Showing posts with label datasheet. Show all posts
Showing posts with label datasheet. Show all posts
Analogues of the corps Philips chip
Reference type matching cases and Philips Semiconductors chip package types circuits other manufacturers.
Reference line transformer HR 1100 - 1152
Pinout, numbered, and the scheme include lowercase transformers (TDKS) from HR. The guide presents a model of HR 1100 and HR 1152.
Interchangeability of active electronic components
Directory compatibility of active electronic components. The handbook presents over 16,000 components.
MOSFET Cross Reference Guide
Directory interoperability field-effect transistors of different manufacturers
Interchangeability of Panasonic Electronic Components
Directory interoperability of electronic components company Panasonic.
Analogues of the transistors and diodes, Philips
Compatibility Guide transistors and diodes and transistors Philips diodes of other manufacturers.
2N2907A datasheet
Features • High current (max.600mA)
• Low voltage (max.60V)
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information)
DESCRIPTION
The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed saturated switching and general purpose applications.
2N2907A datasheet, 2N2907A pdf
2N2907A small signal PNP silicon epitaxial switching transistor
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR
datasheet of lm741
LM74 Operational Amplifier
General Description
The LM741 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. They are direct, plugin replacement for the 709C, LM201, MC1439 and 748 in most applications.
The amplifiers offer many features which make their application nearly foolproof: overload protection on the input and output, no latch-up when the common mode range is exceeded, as well as freedom from oscillations.
General Description
The LM741 series are general purpose operational amplifiers which feature improved performance over industry standards like the LM709. They are direct, plugin replacement for the 709C, LM201, MC1439 and 748 in most applications.
The amplifiers offer many features which make their application nearly foolproof: overload protection on the input and output, no latch-up when the common mode range is exceeded, as well as freedom from oscillations.
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datasheet of mosfet irf640n
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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mmbt3904
2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
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irf5210 datasheet download
IRF5210 HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Power Dissipation 200W
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irf1010ez,irf1010ezs,irf1010ezl datasheet
IRF1010EZ IRF1010EZS IRF1010EZL HEXFET® Power MOSFET
AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET
FeaturesO Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings
Maximum Power Dissipation 140W
Pulsed Drain Current 340A
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IRF1010E HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Pulsed Drain Current 330A
Power Dissipation 200W
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irf740 datasheet
N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH™II MOSFET
TYPICAL RDS(on) = 0.46Ω
* EXCEPTIONAL dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE
* VERY LOW INTRINSIC CAPACITANCES
* EXCEPTIONAL dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE
* VERY LOW INTRINSIC CAPACITANCES
DESCRIPTION :
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS
* HIGH-EFFICIENCY DC-DC CONVERTERS
* UPS AND MOTOR CONTROL
* HIGH-EFFICIENCY DC-DC CONVERTERS
* UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Drain-source Voltage 400v
Drain-gate Voltage 400v
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IRF640 IRF640FP datasheet
N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET
* TYPICAL RDS(on) = 0.150 Ω
* EXTREMELYHIGH dV/dt CAPABILITY
* VERY LOWINTRINSIC CAPACITANCES
* GATE CHARGE MINIMIZED
* EXTREMELYHIGH dV/dt CAPABILITY
* VERY LOWINTRINSIC CAPACITANCES
* GATE CHARGE MINIMIZED
DESCRIPTION :
This power MOSFET is designed using he company’s consolidated strip layout-basedMESH
OVERLAY process. This technology matches and improves the performances compared with
standard parts from various sources.
APPLICATIONS
* HIGH CURRENT SWITCHING
* UNINTERRUPTIBLE POWER SUPPLY (UPS)
* DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
* HIGH CURRENT SWITCHING
* UNINTERRUPTIBLE POWER SUPPLY (UPS)
* DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
ABSOLUTE MAXIMUM RATINGS
Drain-source Voltage 200v
Drain- gate Voltage 200v
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irf540 datasheet
28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17421.
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17421.
Features
• 28A, 100V
• rDS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
• 28A, 100V
• rDS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Maximum Power Dissipation 120w
Drain to Source Breakdown Voltage 100v
Drain to Gate Voltage 100v
Pulsed Drain Current 110A
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1N5402 datasheet
Features :
Diffused Junction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 200A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 200A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant
Mechanical Data :
Case: DO-201AD
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Bright Tin. Plated Leads Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Marking: Type Number
Weight: 1.1 grams (approximate)
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Bright Tin. Plated Leads Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Marking: Type Number
Weight: 1.1 grams (approximate)
| Parameter | Value | Units |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | 200 | v |
| RMS Reverse Voltage | 140 | V |
| Average Rectified Output Current | 3.0 | A |
| Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) | 200 | A |
| Forward Voltage | 1.0 | V |
| Power Dissipation | 2.5 | W |
| Operating and Storage Temperature Range | -65 to +150 | °C |
| Typical Junction Capacitance | 50 | pF |
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1n4937 datasheet
Features
• Low forward voltage drop.
• High surge current capability.
• High reliability.
• High current capability.
Fast Rectifiers
• Low forward voltage drop.
• High surge current capability.
• High reliability.
• High current capability.
Fast Rectifiers
| Parameter | Value | Units |
| Maximum Repetitive Reverse Voltage | 50 | v |
| Average Rectified Forward Current, .375 " lead length @ TA = 50°C | 1.0 | A |
| Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave | 30 | A |
| Operating Junction Temperature | -50 to +150 | °C |
| Storage Temperature Range | -50 to +150 | °C |
| Power Dissipation | 2.5 | W |
| Forward Voltage @ 1.0 A | 1.2 | V |
| Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A | 150 | ns |
| Total Capacitance VR = 4.0 V, f = 1.0 MHz | 12 | pF |
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LM4844 datasheet
Stereo 1.2W Audio Sub-System with 3D Enhancement
LM4844 datasheet
Description
The LM4844 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per channel into an 8Ω load and a stereo OCL headphone amplifier delivering 33mW per channel into a 32Ω load.
It integrates the audio amplifiers, volume control, mixer, power management control, and National 3D enhancement all into a single package. In addition, the LM4844 routes and mixes the stereo and mono inputs into 10 distinct output modes. The LM4844 is controlled through an I 2C compatible interface.
Boomer audio power amplifiers are designed specifically to provide high quality output power with a minimal amount of external components.
The LM4844 is available in a very small 2.5mm x 2.9mm 30-bump micro SMD (TL) package.
Features
• Stereo speaker amplifier
• Stereo OCL headphone amplifier
• Independent Left, Right, and Mono volume controls
• National 3D enhancement
• I 2C compatible interface
• Ultra low shutdown current
• Click and Pop Suppression circuit
• 10 distinct output modes
Applications
• Cell Phones
• PDAs
• Portable Gaming Devices
• Internet Appliances
• Portable DVD, CD, AAC, and MP3 Players
download LM4844 datasheet
LM4844 datasheet
Description
The LM4844 is an integrated audio sub-system designed for stereo cell phone applications. Operating on a 3.3V supply, it combines a stereo speaker amplifier delivering 495mW per channel into an 8Ω load and a stereo OCL headphone amplifier delivering 33mW per channel into a 32Ω load.
It integrates the audio amplifiers, volume control, mixer, power management control, and National 3D enhancement all into a single package. In addition, the LM4844 routes and mixes the stereo and mono inputs into 10 distinct output modes. The LM4844 is controlled through an I 2C compatible interface.
Boomer audio power amplifiers are designed specifically to provide high quality output power with a minimal amount of external components.
The LM4844 is available in a very small 2.5mm x 2.9mm 30-bump micro SMD (TL) package.
Features
• Stereo speaker amplifier
• Stereo OCL headphone amplifier
• Independent Left, Right, and Mono volume controls
• National 3D enhancement
• I 2C compatible interface
• Ultra low shutdown current
• Click and Pop Suppression circuit
• 10 distinct output modes
Applications
• Cell Phones
• PDAs
• Portable Gaming Devices
• Internet Appliances
• Portable DVD, CD, AAC, and MP3 Players
download LM4844 datasheet
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