IRF1010EZ IRF1010EZS IRF1010EZL HEXFET® Power MOSFET
AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET
FeaturesO Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings
Maximum Power Dissipation 140W
Pulsed Drain Current 340A
irf1010ez datasheet irf1010ez pinout irf1010ez pdf
irf1010ez mosfet irf1010ez circuit irf1010ez project irf1010ez data
irf1010ez mosfet irf1010ez circuit irf1010ez project irf1010ez data
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