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irf540 datasheet

28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate  power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17421.

• 28A, 100V
• rDS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Maximum Power Dissipation 120w
Drain to Source Breakdown Voltage 100v
Drain to Gate Voltage 100v
Pulsed Drain Current 110A

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