IRF640 IRF640FP datasheet

N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET

* TYPICAL RDS(on) = 0.150 Ω
* EXTREMELYHIGH dV/dt CAPABILITY
* VERY LOWINTRINSIC CAPACITANCES
* GATE CHARGE MINIMIZED

DESCRIPTION :
This power MOSFET is designed using he company’s consolidated strip layout-basedMESH
OVERLAY process. This technology matches and improves the performances compared with
standard parts from various sources.

APPLICATIONS
* HIGH CURRENT SWITCHING
* UNINTERRUPTIBLE POWER SUPPLY (UPS)
* DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

ABSOLUTE MAXIMUM RATINGS

Drain-source Voltage 200v

Drain- gate Voltage 200v

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