irf5210 datasheet download

IRF5210 HEXFET® Power MOSFET

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Power Dissipation  200W

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irf1010ez,irf1010ezs,irf1010ezl datasheet

IRF1010EZ IRF1010EZS IRF1010EZL HEXFET® Power MOSFET
AUTOMOTIVE MOSFET

Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax

Description
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Maximum Power Dissipation 140W

Pulsed Drain Current 340A

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irf1010ez mosfet irf1010ez circuit irf1010ez project irf1010ez data

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irf1010e datasheet

IRF1010E HEXFET® Power MOSFET

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Pulsed Drain Current 330A

Power Dissipation 200W

download full datasheet

irf1010e datasheet irf1010e pinout   irf1010e pdf

irf1010e mosfet irf1010e circuit irf1010e project irf1010e data

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