irf740 datasheet

N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH™II MOSFET

TYPICAL RDS(on) = 0.46Ω
* EXCEPTIONAL dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE
* VERY LOW INTRINSIC CAPACITANCES

DESCRIPTION :
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS
* HIGH-EFFICIENCY DC-DC CONVERTERS
* UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Drain-source Voltage 400v

Drain-gate Voltage 400v

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IRF640 IRF640FP datasheet

N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET

* TYPICAL RDS(on) = 0.150 Ω
* EXTREMELYHIGH dV/dt CAPABILITY
* VERY LOWINTRINSIC CAPACITANCES
* GATE CHARGE MINIMIZED

DESCRIPTION :
This power MOSFET is designed using he company’s consolidated strip layout-basedMESH
OVERLAY process. This technology matches and improves the performances compared with
standard parts from various sources.

APPLICATIONS
* HIGH CURRENT SWITCHING
* UNINTERRUPTIBLE POWER SUPPLY (UPS)
* DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

ABSOLUTE MAXIMUM RATINGS

Drain-source Voltage 200v

Drain- gate Voltage 200v

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irf540 datasheet

28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate  power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17421.

Features
• 28A, 100V
• rDS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Maximum Power Dissipation 120w

Drain to Source Breakdown Voltage 100v

Drain to Gate Voltage 100v

Pulsed Drain Current 110A

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