tda audio amplifier

tda audio amplifier

home audio amplifiers

power amplifier circuit

TDA2040

20W HIFI POWER AMP

TDA7057Q

2x3W POWER AMP

 

TDA7233S

1.6W POWER AMPLIFIER

 

car amplifier stereo

TDA1554Q

AUDIO AMP 2x11W

 

TDA1553Q

POWER AMP 2x22W

 

TDA1521

POWER AMP 2x12W

 

TDA1514

POWER AMP 40W

 

TDA1010A

POWER AMP 9W

 

TDA 2040

20W HIFI AUDIO AMPLIFIER

 

TDA7241

20W POWER AMPLIFIER

 

 

TDA7350

2x12W POWER AMP

 

 

cheap car amplifier

TDA2003

10W POWER AMPLIFIER

 

TDA2004

2x10W POWER AMP

 

TDA2008

12W POWER AMPLIFIER

 

 

TDA2009

POWER AMP 2x9W

 

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2n5551 datasheet

2n5551 datasheet

NPN General Purpose Amplifier

This device is designed for general purpose high voltage amplifiers


and gas discharge display driving. Sourced from Process 16
 
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
 
downlaod  2n5551 datasheet  and MMBT5551

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irf630 datasheet

irf630 datasheet

IRF630 IRF630FP

TYPICAL RDS(on) = 0.35 Ω

EXTREMELY HIGH dV/dt CAPABILITY

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION


This power MOSFET is designed using he


company’s consolidated strip layout-based MESH

OVERLAY™ process. This technology matches

and improves the performances compared with

standard parts from various sources.


APPLICATIONS

HIGH CURRENT SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

 
download  irf630 datasheet

 

 

 
pinout irf630
 
IRF630-circuits
 
 

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irf3205 datasheet

IRF3205

HEXFET® Power MOSFET
 

Description



Advanced HEXFET® Power MOSFETs from International



Rectifier utilize advanced processing techniques to achieve


extremely low on-resistance per silicon area. This


benefit, combined with the fast switching speed and


ruggedized device design that HEXFET power MOSFETs


are well known for, provides the designer with an extremely


efficient and reliable device for use in a wide variety of


applications.


The TO-220 package is universally preferred for all


commercial-industrial applications at power dissipation


levels to approximately 50 watts. The low thermal


resistance and low package cost of the TO-220 contribute


to its wide acceptance throughout the industry.


l Advanced Process Technology


l Ultra Low On-Resistance


l Dynamic dv/dt Rating


l 175°C Operating Temperature


l Fast Switching


l Fully Avalanche Rated


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buz11 datasheet

buz11 datasheet

30A, 50V, 0.040 Ohm, N-Channel Power



MOSFET

This is an N-Channel enhancement mode silicon gate power


field effect transistor designed for applications such as


switching regulators, switching converters, motor drivers,


relay drivers and drivers for high power bipolar switching


transistors requiring high speed and low gate drive power.


This type can be operated directly from integrated circuits.


Formerly developmental type TA9771.
 
 
Features



• 30A, 50V


• rDS(ON) = 0.040Ω


• SOA is Power Dissipation Limited


• Nanosecond Switching Speeds


• Linear Transfer Characteristics


• High Input Impedance


• Majority Carrier Device


• Related Literature


- TB334 “Guidelines for Soldering Surface Mount


Components to PC Boards”
 
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IR2110 DATASHEET

ir2110 datasheet
HIGH AND LOW SIDE DRIVER

IR2110(-1-2)(S)PbF/IR2113(-1-2)(S)PbF

Features


• Floating channel designed for bootstrap operation

Fully operational to +500V or +600V

Tolerant to negative transient voltage

dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels

• 3.3V logic compatible

Separate logic supply range from 3.3V to 20V

Logic and power ground ±5V offset

• CMOS Schmitt-triggered inputs with pull-down

• Cycle by cycle edge-triggered shutdown logic

• Matched propagation delay for both channels

• Outputs in phase with inputs
 
 
Description


The IR2110/IR2113 are high voltage, high speed power MOSFET and

IGBT drivers with independent high and low side referenced output chan-

nels. Proprietary HVIC and latch immune CMOS technologies enable

ruggedized monolithic construction. Logic inputs are compatible with

standard CMOS or LSTTL output, down to 3.3V logic. The output

drivers feature a high pulse current buffer stage designed for minimum

driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The

floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which

operates up to 500 or 600 volts
 
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irf840 datasheet

irf840 datasheet

8A, 500V, 0.850 Ohm, N-Channel Power



MOSFET


This N-Channel enhancement mode silicon gate power field


effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of


energy in the breakdown avalanche mode of operation. All of


these power MOSFETs are designed for applications such


as switching regulators, switching converters, motor drivers,


relay drivers, and drivers for high power bipolar switching


transistors requiring high speed and low gate drive power.


These types can be operated directly from integrated


circuits.


Formerly developmental type TA17425.
 
 
Features



• 8A, 500V


• rDS(ON) = 0.850Ω


• Single Pulse Avalanche Energy Rated


• SOA is Power Dissipation Limited


• Nanosecond Switching Speeds


• Linear Transfer Characteristics


• High Input Impedance


• Related Literature


- TB334 “Guidelines for Soldering Surface Mount


Components to PC Boards”
 
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irfp460 datasheet

irfp460 datasheet

IRFP460

N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247


PowerMESH™ MOSFET



TYPICAL RDS(on) = 0.22 Ω



EXTREMELY HIGH dv/dt CAPABILITY



100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED


DESCRIPTION


This power MOSFET is designed using the


company’s consolidated strip layout-based MESH


OVERLAY™ process. This technology matches


and improves the performances compared with


standard parts from various sources.


APPLICATIONS :



HIGH CURRENT SWITCHING


UNINTERRUPTIBLE POWER SUPPLY (UPS)

DC/DC COVERTERS FOR TELECOM,


INDUSTRIAL, AND LIGHTING EQUIPMENT
 
 
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irf9540 datasheet

irf9540 datasheet

IRF9540, RF1S9540SM

19A, 100V, 0.200 Ohm, P-Channel Power


MOSFETs

These are P-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. They can be operated directly from

integrated circuits.

Formerly Developmental Type TA17521.
 
 
 
Features


• 19A, 100V

• rDS(ON) = 0.200Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”
 
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irf9530 datasheet

irf9530 datasheet

12A, 100V, 0.300 Ohm, P-Channel Power


MOSFETs

These are P-Channel enhancement mode silicon gate power

field effect transistors. They are advanced power MOSFETs

designed, tested, and guaranteed to withstand a specified

level of energy in the breakdown avalanche mode of

operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. The high input impedance allows these

types to be operated directly from integrated circuits.

Formerly developmental type TA17511.
 
 
Features


• 12A, 100V

• rDS(ON) = 0.300Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”
 
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irf9520 datasheet

irf9520 datasheet

6A, 100V, 0.600 Ohm, P-Channel Power


MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

P-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching converters, motor drivers, relay drivers

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. These types

can be operated directly from integrated circuits.

Formerly developmental type TA17501

 

 

Features

• 6A, 100V

• rDS(ON) = 0.600Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance
 
 
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2n5551 pinout

transistor pinout

2n5551 pinout

1- emitter

2- base

3- collector

2N5551, TO-92 Plastic-Encapsulate Biploar Transistors

2N5551, NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR

2N5551, TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

2N5551, Transistor General Purpose TO-92

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