irf1010ez,irf1010ezs,irf1010ezl datasheet
IRF1010EZ IRF1010EZS IRF1010EZL HEXFET® Power MOSFET
AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET
FeaturesO Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Absolute Maximum Ratings
Maximum Power Dissipation 140W
Pulsed Drain Current 340A
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irf1010ez mosfet irf1010ez circuit irf1010ez project irf1010ez data
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